Showing posts with label Power-Semiconductor. Show all posts
Showing posts with label Power-Semiconductor. Show all posts

Monday, October 3, 2016

CM100E3U-12H - 100A 600V IGBT - Powerex

Each module consists of one IGBT Transistor having a reverse-connected superfast recovery free-wheel diode and an anode-collector connected superfast recovery free-wheel diode. The Powerex Chopper IGBTMOD Modules are designed for use in switching applications.

CM100E3U-12H - 100A 600V IGBT - Powerex

Built in Discrete Super-Fast Recovery (150ns) Free-Wheel Diode.  This is used in Power Product Designs like DC Motor Controls and Boost Regulators.

CM100E3U-12H - 100A 600V IGBT - Powerex

All components and interconnects are isolated from the heat sinking baseplate, offering simplified system  assembly and thermal management.

Features
  • Low Drive Power
  • Low VCE(sat)
  • High Frequency Operation (15-20kHz)
  • Isolated Baseplate for Easy Heat Sinking
Powerex, Inc.
173 Pavilion Lane, Youngwood, PA 1569715697, USA.

Monday, August 26, 2013

High-Voltage High-Power IGBT

IGBT module from  Hitachi. The new IGBT module makes high energy efficiency and silent operation of inverters possible. It has High thermal fatigue durability. It is a High speed and low loss IGBT module.

High-Voltage High-Power IGBT

Low noise due to soft and fast recovery diode. The driving power is less as the MOS gate input capacitance is very low. The modules are very reliable and durable. The heatsink has a Isolation between terminals and base.

High-Voltage High-Power IGBT - Hitachi

From 1700V to 6500V,  High Power Density, Low Inductance, Scalable, Easy Paralleling, Standard and High Isolation Package.

The Hitachi Power Semiconductor Devices mark a new era of Power electronics by High-Power IGBT modules, High-Voltage ICs and Power diodes.

Friday, August 16, 2013

WARP Speed IGBT - International Rectifier

IGBTs are voltage-controlled power transistors, that have higher current densities than equivalent high-voltage power MOSFETs.

WARP Speed IGBT - International Rectifier

IRG4PC40W -TO-247AC
Features Include
  • 2 to 2.5 times the current density of MOSFETs
  • Lower conduction losses at equivalent current rating compared to MOSFETs
  • Reduced current tail for high frequency operation
  • "Positive-only" gate drive
IRG4PC40W - 600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package

Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)  

Of particular benefit to single-ended converters and boost PFC topologies 150W and higher 

Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)  

WARP Speed IGBT - International Rectifier
The IGBT in TO-247 delivers the same efficiency at full loadas the MOSFET in the larger TO-247 package.